ECH8502 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت ECH8502	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi ECH8502-TL-H
Transistor Type: 1PCSNPN&1PCSPNP
Collector Current (Ic): 5A
Power Dissipation (Pd): 1.6W
Collector-Emitter Breakdown Voltage (Vceo): 30V
Package: SOT-28FL
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V, 50V
Vce Saturation (Max) @ Ib, Ic: 120mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.6W
Frequency - Transition: 290MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
Base Part Number: ECH8502
detail: Bipolar (BJT) Transistor Array NPN, PNP 100V, 50V 5A 290MHz 1.6W Surface Mount 8-ECH