NGTB03N60R2DT4G دیتاشیت

NGTB03N60R2DT4G

مشخصات دیتاشیت

نام دیتاشیت NGTB03N60R2DT4G
حجم فایل 61.376 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت NGTB03N60R2DT4G-Isee

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سایر مستندات

NGTB03N60R2DT4G 8 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi NGTB03N60R2DT4G
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Discontinued at Digi-Key
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 49W
  • Switching Energy: 50µJ (on), 27µJ (off)
  • Input Type: Standard
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: 27ns/59ns
  • Test Condition: 300V, 3A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: NGTB03
  • detail: IGBT 600V 9A 49W Surface Mount DPAK

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