FQB9N50CTM دیتاشیت

FQB9N50CTM

مشخصات دیتاشیت

نام دیتاشیت FQB9N50CTM
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FQB9N50CTM

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سایر مستندات

FQB9N50C 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQB9N50CTM
  • Power Dissipation (Pd): 135W
  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 9A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,4.5A
  • Package: TO-263-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: FQB9
  • detail: N-Channel 500V 9A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263AB)

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