NGTB10N60FG دیتاشیت

NGTB10N60FG

مشخصات دیتاشیت

نام دیتاشیت NGTB10N60FG
حجم فایل 83.979 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NGTB10N60FG

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سایر مستندات

NGTB10N60FG 6 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi NGTB10N60FG
  • Collector Current (Ic): 20A
  • Power Dissipation (Pd): 40W
  • Turn?on Delay Time (Td(on)): 40ns
  • Total Gate Charge (Qg@Ic,Vge): 55nC
  • Turn?off Delay Time (Td(off)): 145ns
  • Pulsed Collector Current (Icm): 72A
  • Diode Reverse Recovery Time (Trr): 70ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.7V@15V,10A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
  • Power - Max: 40W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 40ns/145ns
  • Test Condition: 300V, 10A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3FS
  • Base Part Number: NGTB10
  • detail: IGBT 600V 20A 40W Through Hole TO-220F-3FS

محصولات مشابه