FQB6N80TM دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FQB6N80
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حجم فایل
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960.615
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Power Dissipation (Pd):
3.13W
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Drain Source Voltage (Vdss):
800V
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Continuous Drain Current (Id):
5.8A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.95Ω@10V,2.9A
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Package:
TO-263-3
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
800V
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Current - Continuous Drain (Id) @ 25°C:
5.8A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
1.95Ohm @ 2.9A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
31nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1500pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
3.13W (Ta), 158W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263AB)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FQB6
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detail:
N-Channel 800V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB)
