FQB19N20CTM دیتاشیت

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مشاهده دیتاشیت FQB19N20CTM	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FQB19N20CTM
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.13W;139W
Total Gate Charge (Qg@Vgs): 40nC@10V
Drain Source Voltage (Vdss): 200V
Input Capacitance (Ciss@Vds): 830pF@25V
Continuous Drain Current (Id): 19A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Reverse Transfer Capacitance (Crss@Vds): 85pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 140mΩ@10V,9.5A
Package: D2PAK
Manufacturer: onsemi
Series: QFET®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: FQB1
detail: N-Channel 200V 19A (Tc) 3.13W (Ta), 139W (Tc) Surface Mount D²PAK (TO-263AB)