دیتاشیت FQB5N60CTM-WS
مشخصات دیتاشیت
| نام دیتاشیت |
FQB5N60CTM-WS
|
| حجم فایل |
73.843
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FQB5N60CTM-WS
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
100W
-
Total Gate Charge (Qg@Vgs):
15nC@10V
-
Drain Source Voltage (Vdss):
600V
-
Input Capacitance (Ciss@Vds):
515pF@25V
-
Continuous Drain Current (Id):
4.5A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
6.5pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2Ω@10V,2.25A
-
Package:
D2PAK
-
Manufacturer:
onsemi
-
Series:
QFET®
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
600V
-
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2.25A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
670pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
3.13W (Ta), 100W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D²PAK (TO-263AB)
-
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
Base Part Number:
FQB5
-
detail:
N-Channel 600V 4.5A (Tc) 3.13W (Ta), 100W (Tc) Surface Mount D²PAK (TO-263AB)
