FQB11N40CTM دیتاشیت

FQB11N40CTM

مشخصات دیتاشیت

نام دیتاشیت FQB11N40CTM
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FQB11N40CTM

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سایر مستندات

FQB11N40C 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQB11N40CTM
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 135W
  • Total Gate Charge (Qg@Vgs): 28nC@10V
  • Drain Source Voltage (Vdss): 400V
  • Input Capacitance (Ciss@Vds): 840pF@25V
  • Continuous Drain Current (Id): 10.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 85pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 500mΩ@10V,5.25A
  • Package: D2PAK
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: FQB1
  • detail: N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263AB)

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