- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت FQD18N20V2TM
FQD18N20V2TM دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FQD18N20V2TM |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 9 |
دانلود دیتاشیت FQD18N20V2TM |
دانلود دیتاشیت |
|---|
سایر مستندات
FQD18N20V2 9 pages
FQD18N20V2TM 7 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQD18N20V2TM
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W;83W
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Drain Source Voltage (Vdss): 200V
- Input Capacitance (Ciss@Vds): 1080pF@25V
- Continuous Drain Current (Id): 15A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 140mΩ@7.5A,10V
- Package: TO-252
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FQD1
- detail: N-Channel 200V 15A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount D-Pak