NDDP010N25AZT4H دیتاشیت

NDDP010N25AZT4H

مشخصات دیتاشیت

نام دیتاشیت NDDP010N25AZT4H
حجم فایل 67.756 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NDDP010N25AZT4H

دانلود دیتاشیت

سایر مستندات

NDDP010N25AZ 6 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NDDP010N25AZT4H
  • Power Dissipation (Pd): 1W
  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 10A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 420mΩ@10V,5A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 52W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK/TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: NDDP0
  • detail: N-Channel 250V 10A (Ta) 1W (Ta), 52W (Tc) Surface Mount DPAK/TP-FA

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