NVMFS5A140PLZWFT1G دیتاشیت

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مشاهده دیتاشیت NVMFS5A140PLZWFT1G	دانلود دیتاشیت

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMFS5A140PLZWFT1G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 200W
Total Gate Charge (Qg@Vgs): 136nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 7.4nF@20V
Continuous Drain Current (Id): 140A
Gate Threshold Voltage (Vgs(th)@Id): 2.6V@1mA
Reverse Transfer Capacitance (Crss@Vds): 720pF@20V
Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@10V,50A
Package: SO-8-FL-5.8mm
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Base Part Number: NVMFS5
detail: P-Channel 40V 20A (Ta), 140A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)