FCPF067N65S3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FCPF067N65S3
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حجم فایل
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67.116
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FCPF067N65S3
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
46W
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Total Gate Charge (Qg@Vgs):
78nC@10V
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
3090pF@400V
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Continuous Drain Current (Id):
44A
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Gate Threshold Voltage (Vgs(th)@Id):
4.5V@4.4mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
67mΩ@22A,10V
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Package:
TO-220F
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Manufacturer:
onsemi
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Series:
SuperFET® III
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
67mOhm @ 22A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 4.4mA
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Gate Charge (Qg) (Max) @ Vgs:
78nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
3090pF @ 400V
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FET Feature:
-
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Power Dissipation (Max):
46W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220F
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
FCPF06
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detail:
N-Channel 650V 44A (Tc) 46W (Tc) Through Hole TO-220F
