FDMA410NZ دیتاشیت

FDMA410NZ

مشخصات دیتاشیت

نام دیتاشیت FDMA410NZ
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FDMA410NZ

دانلود دیتاشیت

سایر مستندات

FDMA410NZ 9 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDMA410NZ
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.4W
  • Total Gate Charge (Qg@Vgs): 14nC@4.5V
  • Input Capacitance (Ciss@Vds): 1080pF@10V
  • Continuous Drain Current (Id): 9.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@9.5A,4.5V
  • Package: MicroFET-6
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MicroFET (2x2)
  • Package / Case: 6-VDFN Exposed Pad
  • Base Part Number: FDMA41
  • detail: N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

محصولات مشابه