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NTR1P02LT1G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | NTR1P02LT1G |
|---|---|
| حجم فایل | 89.814 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت NTR1P02LT1G |
دانلود دیتاشیت |
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سایر مستندات
NTR1P02L, NVTR01P02L 5 pages
مشخصات فنی
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi NTR1P02LT1G
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 400mW
- Total Gate Charge (Qg@Vgs): 5.5nC@4V
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): 225pF@5V
- Continuous Drain Current (Id): 1.3A
- Gate Threshold Voltage (Vgs(th)@Id): 1.25V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 220mΩ@4.5V,750mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: NTR1P0
- detail: P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)