FDMC8651 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDMC8651	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC8651
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.3W;41W
Total Gate Charge (Qg@Vgs): 27.2nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 3365pF@15V
Continuous Drain Current (Id): 15A;20A
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 6.1mΩ@4.5V,15A
Package: Power-33-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27.2nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 3365pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: Power33
Package / Case: 8-PowerTDFN
Base Part Number: FDMC86
detail: N-Channel 30V 15A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33