SMMBT2222AWT1G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت SMMBT2222AWT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi SMMBT2222AWT1G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 600mA
Power Dissipation (Pd): 150mW
Transition Frequency (fT): 300MHz
DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@50mA,500mA
Package: SC-70-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 300MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MMBT2222
detail: Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SC-70-3 (SOT323)