NTGS5120PT1G دیتاشیت

NTGS5120PT1G

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نام دیتاشیت NTGS5120PT1G
حجم فایل 73.65 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: TECH PUBLIC NTGS5120PT1G
  • Package: SOT-23-6
  • Manufacturer: TECH PUBLIC
  • Type: P Channel
  • Power Dissipation (Pd): 600mW
  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 1.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 111mΩ@10V,2.9A
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 942pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
  • Base Part Number: NTGS51
  • detail: P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP

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