NTTFS4C02NTAG دیتاشیت

NTTFS4C02NTAG

مشخصات دیتاشیت

نام دیتاشیت NTTFS4C02NTAG
حجم فایل 95.168 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت NTTFS4C02NTAG

دانلود دیتاشیت

سایر مستندات

NTTFS4C02N 7 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTTFS4C02NTAG
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: DFN-5(3x3)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
  • Base Part Number: NTTFS4
  • detail: N-Channel 30V 170A (Tc) 91W (Tc) Surface Mount 8-WDFN (3.3x3.3)

محصولات مشابه