MJF3055G دیتاشیت

MJF3055G

مشخصات دیتاشیت

نام دیتاشیت MJF3055G
حجم فایل 102.265 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت MJF3055G

دانلود دیتاشیت

سایر مستندات

MJF3055,2955 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi MJF3055G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 2W
  • Transition Frequency (fT): 2MHz
  • DC Current Gain (hFE@Ic,Vce): 20@4A,4V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 90V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2.5V@10A,3.3A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 2MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
  • Base Part Number: MJF30
  • detail: Bipolar (BJT) Transistor NPN 90V 10A 2MHz 2W Through Hole TO-220FP

محصولات مشابه