FDP55N06 دیتاشیت

FDP55N06

مشخصات دیتاشیت

نام دیتاشیت FDP55N06
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت FDP55N06

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

FDP55N06, FDPF55N06 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDP55N06
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 114W
  • Total Gate Charge (Qg@Vgs): 37nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 1510pF@25V
  • Continuous Drain Current (Id): 55A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,27.5A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: UniFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FDP55
  • detail: N-Channel 60V 55A (Tc) 114W (Tc) Through Hole TO-220-3

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