دیتاشیت ATP302-TL-H
مشخصات دیتاشیت
نام دیتاشیت |
ATP302
|
حجم فایل |
363.959
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi ATP302-TL-H
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Power Dissipation (Pd):
70W
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Drain Source Voltage (Vdss):
60V
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Continuous Drain Current (Id):
70A
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Gate Threshold Voltage (Vgs(th)@Id):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
13mΩ@10V,35A
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Package:
-
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
13mOhm @ 35A, 10V
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Vgs(th) (Max) @ Id:
-
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Gate Charge (Qg) (Max) @ Vgs:
115nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
5400pF @ 20V
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FET Feature:
-
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Power Dissipation (Max):
70W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
ATPAK
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Package / Case:
ATPAK (2 leads+tab)
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Base Part Number:
ATP302
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detail:
P-Channel 60V 70A (Ta) 70W (Tc) Surface Mount ATPAK