NTMFS5H600NLT1G دیتاشیت

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مشاهده دیتاشیت NTMFS5H600NLT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMFS5H600NLT1G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.3W;160W
Total Gate Charge (Qg@Vgs): 89nC@10V
Input Capacitance (Ciss@Vds): 6680pF@30V
Continuous Drain Current (Id): 35A;250A
Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.3mΩ@50A,10V
Package: DFN-5
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6680pF @ 30V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Base Part Number: NTMFS5
detail: N-Channel 60V 35A (Ta), 250A (Tc) 3.3W (Ta), 160W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)