PCP1203-TD-H Datasheet

PCP1203

Datasheet specifications

Datasheet's name PCP1203
File size 382.255 KB
File type pdf
Number of pages 7

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi PCP1203-TD-H
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1.5A
  • Power Dissipation (Pd): 3.5W
  • Transition Frequency (fT): 500MHz
  • DC Current Gain (hFE@Ic,Vce): 200@100mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@750mA,15mA
  • Package: SOT-89-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1.3W
  • Frequency - Transition: 500MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
  • Base Part Number: PCP1203
  • detail: Bipolar (BJT) Transistor NPN 30V 1.5A 500MHz 1.3W Surface Mount PCP

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