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2SK3746-1E Datasheet
Datasheet specifications
| Datasheet's name | 2SK3746 |
|---|---|
| File size | 241.972 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet 2SK3746 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi 2SK3746-1E
- Operating Temperature: +150°C@(Tch)
- Power Dissipation (Pd): 110W
- Total Gate Charge (Qg@Vgs): 37.5nC@10V
- Drain Source Voltage (Vdss): 1.5kV
- Input Capacitance (Ciss@Vds): 380pF@30V
- Continuous Drain Current (Id): 2A
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): 40pF@30V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10Ω@10V,1A
- Package: TO-3P
- Manufacturer: onsemi
- Series: -
- Packaging: Tray
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PB
- Package / Case: TO-3P-3, SC-65-3
- Base Part Number: 2SK3746
- detail: N-Channel 1500V 2A (Ta) 2.5W (Ta), 110W (Tc) Through Hole TO-3PB
