دیتاشیت HGTG18N120BND
مشخصات دیتاشیت
| نام دیتاشیت |
HGTG18N120BND
|
| حجم فایل |
100.765
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
NPT
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Operating Temperature:
55°C~+150°C@(Tj)
-
Collector Current (Ic):
54A
-
Power Dissipation (Pd):
390W
-
Turn?on Delay Time (Td(on)):
23ns
-
Turn?on Switching Loss (Eon):
1.9mJ
-
Total Gate Charge (Qg@Ic,Vge):
165nC
-
Turn?off Delay Time (Td(off)):
170ns
-
Pulsed Collector Current (Icm):
160A
-
Turn?off Switching Loss (Eoff):
1.8mJ
-
Diode Reverse Recovery Time (Trr):
75ns
-
Collector-Emitter Breakdown Voltage (Vces):
1200V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.7V@15V,18A
-
Package:
TO-247
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Not For New Designs
-
IGBT Type:
NPT
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Voltage - Collector Emitter Breakdown (Max):
1200V
-
Current - Collector (Ic) (Max):
54A
-
Current - Collector Pulsed (Icm):
165A
-
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 18A
-
Power - Max:
390W
-
Switching Energy:
800µJ (on), 1.8mJ (off)
-
Input Type:
Standard
-
Gate Charge:
165nC
-
Td (on/off) @ 25°C:
23ns/170ns
-
Test Condition:
960V, 18A, 3Ohm, 15V
-
Mounting Type:
Through Hole
-
Package / Case:
TO-247-3
-
Supplier Device Package:
TO-247-3
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Base Part Number:
HGTG18N120
-
detail:
IGBT NPT 1200V 54A 390W Through Hole TO-247-3
