FGY75T120SQDN دیتاشیت

FGY75T120SQDN

مشخصات دیتاشیت

نام دیتاشیت FGY75T120SQDN
حجم فایل 90.968 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FGY75T120SQDN

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سایر مستندات

FGY75T120SQDN 8 pages

مشخصات فنی

  • RoHS: true
  • Type: Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGY75T120SQDN
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 150A
  • Power Dissipation (Pd): 790W
  • Turn?on Delay Time (Td(on)): 64ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 6.25mJ
  • Total Gate Charge (Qg@Ic,Vge): 399nC
  • Turn?off Delay Time (Td(off)): 332ns
  • Pulsed Collector Current (Icm): 300A
  • Turn?off Switching Loss (Eoff): 1.96mJ
  • Diode Reverse Recovery Time (Trr): 99ns
  • Collector-Emitter Breakdown Voltage (Vces): 1200V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,75A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
  • Power - Max: 790W
  • Switching Energy: 6.25mJ (on), 1.96mJ (off)
  • Input Type: Standard
  • Gate Charge: 399nC
  • Td (on/off) @ 25°C: 64ns/332ns
  • Test Condition: 600V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 99ns
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Base Part Number: FGY75
  • detail: IGBT Field Stop 1200V 150A 790W Through Hole TO-247-3

محصولات مشابه