دیتاشیت FQB33N10TM
مشخصات دیتاشیت
| نام دیتاشیت |
FQB33N10
|
| حجم فایل |
1081.418
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
-
FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
52mOhm @ 16.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
51nC @ 10V
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Vgs (Max):
±25V
-
Input Capacitance (Ciss) (Max) @ Vds:
1500pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
3.75W (Ta), 127W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263AB)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FQB3
-
detail:
N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB)
