دیتاشیت NTTFS2D1N04HLTWG
مشخصات دیتاشیت
| نام دیتاشیت |
NTTFS2D1N04HL
|
| حجم فایل |
277.578
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTTFS2D1N04HLTWG
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.2W;83W
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Total Gate Charge (Qg@Vgs):
43.6nC@10V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
2745pF@20V
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Continuous Drain Current (Id):
24A;150A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@120uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
2.1mΩ@23A,10V
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Package:
PQFN-8(3.3x3.3)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 150A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
2.1mOhm @ 23A, 10V
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Vgs(th) (Max) @ Id:
2V @ 120µA
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Gate Charge (Qg) (Max) @ Vgs:
43.6nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
2745pF @ 20V
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FET Feature:
-
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Power Dissipation (Max):
2.2W (Ta), 83W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
8-PQFN (3.3x3.3)
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Package / Case:
8-PowerWDFN
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detail:
N-Channel 40V 24A (Ta), 150A (Tc) 2.2W (Ta), 83W (Tc) Surface Mount 8-PQFN (3.3x3.3)
