دیتاشیت NTTFD9D0N06HLTWG
مشخصات دیتاشیت
| نام دیتاشیت |
NTTFD9D0N06HL
|
| حجم فایل |
280.293
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
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RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTTFD9D0N06HLTWG
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1.7W;26W
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Total Gate Charge (Qg@Vgs):
13.5nC@10V
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Input Capacitance (Ciss@Vds):
948pF@30V
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Continuous Drain Current (Id):
9A;38A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@50uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
9mΩ@10A,10V
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Package:
WDFN-12
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Standard
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 38A (Tc)
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Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
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Vgs(th) (Max) @ Id:
2V @ 50µA
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Gate Charge (Qg) (Max) @ Vgs:
13.5nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
948pF @ 30V
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Power - Max:
1.7W (Ta), 26W (Tc)
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Mounting Type:
Surface Mount
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Package / Case:
12-PowerWQFN
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Supplier Device Package:
12-WQFN (3.3x3.3)
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detail:
Mosfet Array 2 N-Channel (Dual) 60V 9A (Ta), 38A (Tc) 1.7W (Ta), 26W (Tc) Surface Mount 12-WQFN (3.3x3.3)
