NTMJS1D5N04CLTWG دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTMJS1D5N04CLTWG
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حجم فایل
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91.235
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTMJS1D5N04CLTWG
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
3.8W;110W
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Total Gate Charge (Qg@Vgs):
70nC@10V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
4300pF@20V
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Continuous Drain Current (Id):
38A;200A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@130uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.4mΩ@50A,10V
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Package:
LFPAK-8
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
38A (Ta), 200A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
1.4mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id:
2V @ 130µA
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Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
4300pF @ 20V
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FET Feature:
-
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Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
8-LFPAK
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Package / Case:
SOT-1205, 8-LFPAK56
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Base Part Number:
NTMJS1
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detail:
N-Channel 40V 38A (Ta), 200A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount 8-LFPAK
