NTMJS0D8N04CLTWG دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMJS0D8N04CLTWG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 4.2W;180W
Total Gate Charge (Qg@Vgs): 162nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 9600pF@25V
Continuous Drain Current (Id): 56A;368A
Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 0.72mΩ@50A,10V
Package: LFPAK-8
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 368A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 720µOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 25V
FET Feature: -
Power Dissipation (Max): 4.2W (Ta), 180W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-LFPAK
Package / Case: SOT-1205, 8-LFPAK56
Base Part Number: NTMJS0
detail: N-Channel 40V 56A (Ta), 368A (Tc) 4.2W (Ta), 180W (Tc) Surface Mount 8-LFPAK