NTMFSC004N08MC دیتاشیت

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مشاهده دیتاشیت NTMFSC004N08MC	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMFSC004N08MC
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 51W;127W
Total Gate Charge (Qg@Vgs): 43.4nC@10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 2980pF@40V
Continuous Drain Current (Id): 86A;136A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@44A,10V
Package: DFN-8(5x6)
Manufacturer: onsemi
Series: Dual Cool™
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 40V
FET Feature: -
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5.1x6.15)
Package / Case: 8-PowerVDFN
detail: N-Channel 80V 86A (Ta), 136A (Tc) 51W (Ta), 127W (Tc) Surface Mount 8-DFN (5.1x6.15)