NTBG020N090SC1 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NTBG020N090SC1-Isee	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTBG020N090SC1
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.7W;477W
Total Gate Charge (Qg@Vgs): 200nC@-5V/15V
Drain Source Voltage (Vdss): 900V
Input Capacitance (Ciss@Vds): 4.415nF@450V
Continuous Drain Current (Id): 9.8A;112A
Gate Threshold Voltage (Vgs(th)@Id): 2.6V@20mA
Reverse Transfer Capacitance (Crss@Vds): 25pF@450V
Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@18V,60A
Package: D2PAK-7
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 15V
Vgs (Max): +19V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 450V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number: NTBG02
detail: N-Channel 900V 9.8A (Ta), 112A (Tc) 3.7W (Ta), 477W (Tc) Surface Mount D2PAK-7