NTMT064N65S3H دیتاشیت

NTMT064N65S3H

مشخصات دیتاشیت

نام دیتاشیت NTMT064N65S3H
حجم فایل 50.018 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت NTMT064N65S3H

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سایر مستندات

NTMT064N65S3H 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTMT064N65S3H
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 260W
  • Total Gate Charge (Qg@Vgs): 82nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 3745pF@400V
  • Continuous Drain Current (Id): 40A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@3.9mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 64mΩ@20A,10V
  • Package: TDFN-4
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 3.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3745pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 260W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-TDFN (8x8)
  • Package / Case: 4-PowerTSFN
  • Base Part Number: NTMT064
  • detail: N-Channel 650V 40A (Tc) 260W (Tc) Surface Mount 4-TDFN (8x8)

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