دیتاشیت SMSD1819A-RT1G

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دانلود دیتاشیت MSD/SMSD1819A-RT1G	MSD/SMSD1819A-RT1G Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi SMSD1819A-RT1G
Transistor Type: NPN
Collector Current (Ic): 100mA
Power Dissipation (Pd): 150mW
DC Current Gain (hFE@Ic,Vce): 210@2mA,10V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@10mA,100mA
Package: SC-70-3
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: SMSD1
detail: Bipolar (BJT) Transistor NPN 50V 100mA 150mW Surface Mount SC-70-3 (SOT323)