SBC847CWT3G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
SBC847CWT3G
|
|
حجم فایل
|
50.018
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
15
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi SBC847CWT3G
-
Transistor Type:
NPN
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
150mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
420@2mA,5V
-
Collector Cut-Off Current (Icbo):
15nA
-
Collector-Emitter Breakdown Voltage (Vceo):
45V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@100mA,5mA
-
Package:
SC-70
-
Manufacturer:
onsemi
-
Series:
Automotive, AEC-Q101
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
100mA
-
Voltage - Collector Emitter Breakdown (Max):
45V
-
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
-
Current - Collector Cutoff (Max):
15nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
-
Power - Max:
150mW
-
Frequency - Transition:
100MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
SC-70, SOT-323
-
Supplier Device Package:
SC-70-3 (SOT323)
-
Base Part Number:
SBC847
-
detail:
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150mW Surface Mount SC-70-3 (SOT323)
