SHN1B01FDW1T1G دیتاشیت

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مشاهده دیتاشیت SHN1B01FDW1T1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi SHN1B01FDW1T1G
Transistor Type: NPN&PNP
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 380mW
DC Current Gain (hFE@Ic,Vce): 200@2mA,6V
Collector Cut-Off Current (Icbo): 2uA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,100mA
Package: SC-74-6
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 380mW
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74
Base Part Number: SHN1B
detail: Bipolar (BJT) Transistor Array NPN, PNP 50V 200mA 380mW Surface Mount SC-74