MSB1218A-RT1 数据手册
其他文档
MSB1218A-RT1G 5 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NSVMSB1218A-RT1G
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic,Vce): 210@2mA,10V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@10mA,100mA
- Package: SC-70-3
- Manufacturer: onsemi
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 150mW
- Frequency - Transition: -
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
- Base Part Number: MSB12
- detail: Bipolar (BJT) Transistor PNP 45V 100mA 150mW Surface Mount SC-70-3 (SOT323)