دیتاشیت NSVMSB1218A-RT1G
مشخصات دیتاشیت
| نام دیتاشیت |
MSB1218A-RT1
|
| حجم فایل |
120.469
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi NSVMSB1218A-RT1G
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Transistor Type:
PNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
150mW
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DC Current Gain (hFE@Ic,Vce):
210@2mA,10V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@10mA,100mA
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Package:
SC-70-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
45V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 100mA
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Current - Collector Cutoff (Max):
100µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
210 @ 2mA, 10V
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Power - Max:
150mW
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Frequency - Transition:
-
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Mounting Type:
Surface Mount
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Package / Case:
SC-70, SOT-323
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Supplier Device Package:
SC-70-3 (SOT323)
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Base Part Number:
MSB12
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detail:
Bipolar (BJT) Transistor PNP 45V 100mA 150mW Surface Mount SC-70-3 (SOT323)
