NSBC144EPDXV6T1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NSBC144EPDXV6T1G
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حجم فایل
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94.952
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Digital Transistors
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Datasheet:
onsemi NSBC144EPDXV6T1G
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Transistor Type:
1 NPN,1 PNP - Pre-Biased
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
500mW
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Transition Frequency (fT):
-
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DC Current Gain (hFE@Ic,Vce):
80@5mA,10V
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Collector Cut-Off Current (Icbo):
500nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@10mA,300uA
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Package:
SOT-563
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Manufacturer:
onsemi
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Series:
*
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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Base Part Number:
NSBC14
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detail:
Pre-Biased Bipolar Transistor (BJT)
