NSVDTA143ZET1G دیتاشیت

DTA143ZM3T5G

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نام دیتاشیت DTA143ZM3T5G
حجم فایل 89.744 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت DTA143ZM3T5G

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet: onsemi NSVDTA143ZET1G
  • Transistor Type: One PNP - Pre-Biased
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 80@5mA,10V
  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,300uA
  • Package: SC-75
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75, SOT-416
  • Base Part Number: DTA143
  • detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount SC-75, SOT-416

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