MUN(2,5)231, MMUN2231L, DC123Exx دیتاشیت

مشخصات دیتاشیت

دانلود دیتاشیت MUN(2,5)231, MMUN2231L, DC123Exx	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: onsemi NSVDTC123EM3T5G
Transistor Type: NPN-预偏置
Collector Current (Ic): 100mA
Power Dissipation (Pd): 260mW
DC Current Gain (hFE@Ic,Vce): 8@5mA,10V
Collector Cut-Off Current (Icbo): 500nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@5mA,10mA
Package: -
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Base Part Number: NSVDTC123
detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723