MSD601-RT1, ST1 数据手册
其他文档
MSD601-RT1G 4 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NSVMSD601-RT1G
- Package: -
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 200mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- Base Part Number: MSD60
- detail: Bipolar (BJT) Transistor NPN 50V 100mA 200mW Surface Mount SC-59