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- دیتاشیت MUN5131T1G
MUN5131T1G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | MUN5131T1G |
|---|---|
| حجم فایل | 90.41 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت MUN5131T1G |
دانلود دیتاشیت |
|---|
سایر مستندات
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet: onsemi NSVMMUN2131LT1G
- Transistor Type: One PNP - Pre-Biased
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 246mW
- DC Current Gain (hFE@Ic,Vce): 8@5mA,10V
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,5mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Power - Max: 246mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Base Part Number: MMUN21
- detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)