دیتاشیت KSD471ACYTA
مشخصات دیتاشیت
| نام دیتاشیت |
KSD471A
|
| حجم فایل |
271.296
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi KSD471ACYTA
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
800mW
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Transition Frequency (fT):
130MHz
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DC Current Gain (hFE@Ic,Vce):
120@100mA,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
30V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@1A,100mA
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Discontinued at Digi-Key
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Current - Collector (Ic) (Max):
1A
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Voltage - Collector Emitter Breakdown (Max):
30V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 100mA, 1V
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Power - Max:
800mW
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Frequency - Transition:
130MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
KSD471
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detail:
Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW Through Hole TO-92-3
