NSVMMBT5088LT3G دیتاشیت

NSVMMBT5088LT3G

مشخصات دیتاشیت

نام دیتاشیت NSVMMBT5088LT3G
حجم فایل 50.018 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NSVMMBT5088LT3G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 50mA
  • Power Dissipation (Pd): 225mW
  • Transition Frequency (fT): 50MHz
  • DC Current Gain (hFE@Ic,Vce): 300@100uA,5V
  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@10mA,1mA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 50MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Base Part Number: NSVMMBT5
  • detail: Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236)

محصولات مشابه