SBC847CDXV6T1G دیتاشیت

SBC847CDXV6T1G

مشخصات دیتاشیت

نام دیتاشیت SBC847CDXV6T1G
حجم فایل 82.243 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت SBC847CDXV6T1G

دانلود دیتاشیت

سایر مستندات

BC847CDXV6T(1, 5), BC84CDXV6T(1, 5) 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi SBC847CDXV6T1G
  • Transistor Type: 2 NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 500mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 520@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA,5mA
  • Package: SOT-563
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
  • Base Part Number: SBC847
  • detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 500mW Surface Mount SOT-563

محصولات مشابه