NSBA113EDXV6T1G دیتاشیت

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مشاهده دیتاشیت MUN5130DW1, NSBA113EDXV6	دانلود دیتاشیت

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Manufacturer: ON Semiconductor
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NSBA11
detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363