NSBA144WDP6T5G دیتاشیت

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دانلود دیتاشیت NSBA144WDP6T5G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: onsemi NSBA144WDP6T5G
Transistor Type: 2 PNP - Pre-Biased
Collector Current (Ic): 100mA
Power Dissipation (Pd): 408mW
DC Current Gain (hFE@Ic,Vce): 80@5mA,10V
Collector Cut-Off Current (Icbo): 500nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@300uA,10mA
Package: -
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 408mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963
Base Part Number: NSBA14
detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963