MMBFJ175LT3G دیتاشیت

MMBFJ175LT3G

مشخصات دیتاشیت

نام دیتاشیت MMBFJ175LT3G
حجم فایل 92.76 کیلوبایت
نوع فایل pdf
تعداد صفحات 3

مشاهده دیتاشیت MMBFJ175LT3G

دانلود دیتاشیت

سایر مستندات

MMBFJ175LT1 2 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/JFETs
  • FET Type: P-Channel
  • Datasheet: onsemi MMBFJ175LT3G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Input Capacitance (Ciss@Vds): 11pF@10V
  • Total Device Dissipation (Pd): 225mW
  • Drain Current (Idss@Vds,Vgs=0): 7mA@15V
  • Gate-Source Breakdown Voltage (V(BR)GSS): 30V
  • Gate-Source Cutoff Voltage (VGS(off)@ID): 3V@10nA
  • Static Drain-Source On Resistance (RDS(on)): 125Ω
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
  • Resistance - RDS(On): 125 Ohms
  • Power - Max: 225mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Base Part Number: MMBFJ1
  • detail: JFET P-Channel 30V 225mW Surface Mount SOT-23 (TO-236AB)

محصولات مشابه